STRUCTURE AND METHOD FOR ISOLATION OF SEMICONDUCTOR DEVICE

摘要

An isolation structure of a semiconductor device and an isolation method thereof are provided to fill a gap of a trench without a void and prevent generation of grooves on a surface of an isolation layer by changing a vertical sidewall of a trench into an oblique sidewall. An active region and a trench(25) are formed on a semiconductor substrate(10). A plurality of elements are formed on the active region. The trench is used for isolating the elements from each other. A spacer(35) is formed at a sidewall of the trench. An insulating layer is formed in a gap of the trench. A liner insulating layer(31) is formed outside a spacer within the trench.