发明名称 |
SILICON DIOXIDE REMOVING METHOD |
摘要 |
A method for removing silicon dioxide residuals is disclosed. The method includes reacting a portion of a silicon dioxide layer (i.e., oxide) to form a reaction product layer, removing the reaction product layer and annealing in an environment to remove oxide residuals. The method finds application in a variety of semiconductor fabrication processes including, for example, fabrication of a vertical HBT or silicon-to-silicon interface without an oxide interface.
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申请公布号 |
US2005070101(A1) |
申请公布日期 |
2005.03.31 |
申请号 |
US20030605435 |
申请日期 |
2003.09.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GEISS PETER J.;JOSEPH ALVIN J.;LIU XUEFENG;NAKOS JAMES S.;QUINLIVAN JAMES J. |
分类号 |
H01L21/302;H01L21/311;H01L21/331;H01L21/461;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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