发明名称 Method and apparatus for plasma processing
摘要 A plasma reactor including a process chamber, a holding structure constructed arranged to hold a plasma source assembly and a support structure constructed and arranged to support a chuck assembly. The holding structure at least partially constitutes a wall of said vacuum chamber. The support structure supporting or holding the chuck assembly can be coupled to a lift mechanism which can raise or lower the chuck assembly relative to the plasma source assembly. The lift mechanism can be disposed above or below the process chamber.
申请公布号 US2005066902(A1) 申请公布日期 2005.03.31
申请号 US20040823724 申请日期 2004.04.14
申请人 TOKYO ELECTRON LIMITED 发明人 FINK STEVEN T.
分类号 H01J37/32;H01L21/00;H01L21/687;(IPC1-7):C23C16/00 主分类号 H01J37/32
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