METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a highly reliable semiconductor device manufacturing method without damaging a diffusion layer in connection with resist film removal. SOLUTION: A plurality of gate electrodes 2 are formed on a semiconductor substrate 1, an impurity is injected with the gate electrodes 2 as a mask to form an N-diffusion layer 5, a third resist film 11 is formed to partially cover the semiconductor substrate 1 except the middle portion of the N-diffusion layer 5, and an N+diffusion layer 12 with a higher concentration than that of the N-diffusion layer 5 is formed in the middle portion of the N-diffusion layer 5 with the third resist film 11 as a mask. When forming an offset region C wherein no gate electrode 2 is present in the upper portion but only the N-diffusion layer 5 is present, after the formation of the N-diffusion layer 5 and before the formation of the third resist film 11, a second protecting film 10 composed of a thin film and having properties different from those of the third resist film 11 is formed on the semiconductor substrate 1, and impurity injection is performed via the second protecting film 10. COPYRIGHT: (C)2005,JPO&NCIPI