| 摘要 |
A method for fabricating a TFT having the steps of providing a substrate; sequentially depositing a transparent conductive layer, a first metal layer, a first insulating layer, a semiconductor layer, and a second metal layer on the substrate; performing a first photo-etching-process (PEP) to remove portions of the deposited layers to form a source electrode and a drain electrode and define a channel region, the first PEP includes a first halftone photolithograph process; depositing a second insulating layer and performing a second PEP to form a plurality of contact holes; and depositing a third metal layer and performing a third PEP to remove portions of the third metal layer. |
