METHOD FOR PRODUCING SOI WAFER

摘要

Hydrogen gas is ion-implanted into a wafer for active layer via an oxide film. The wafer for active layer is bonded with a supporting wafer using the oxide film as the bonding surface. The bonded wafer is subjected to a heat treatment at 400-1000˚C, so that the bonded wafer is divided at the ion implanted layer, thereby producing an SOI wafer. In this dividing heat treatment, the temperature difference in the surface of the bonded wafer is controlled to be not more than 40˚C, so that complete separation can be attained through the entire wafer at the ion implanted layer without leaving an undivided region.