| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method in which a condensing efficiency on a light receiving region can be enhanced. SOLUTION: This semiconductor device comprises a silicon substrate 1, a light receiving element 3 provided on the silicon substrate 1 for a photoelectric transfer, a passivation 13 provided on the silicon substrate 1 so as to cover the light receiving element 3, and a reflection film 11 for reflecting a light which deviates from above the light receiving element 3 and advances toward the silicon substrate 1 surrounding the light receiving element 3 onto the light receiving element 3 side in the passivation 13. As at least a part of a light which deviates from an intrinsic incident course to the light receiving element 3 and is incident on an interlayer insulating film 9 can be reflected on the light receiving element 3 side by the reflection film 11, the condensing efficiency on the light receiving element 3 can be increased. COPYRIGHT: (C)2005,JPO&NCIPI
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