发明名称 METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LASER DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride semiconductor laser device that can easily control the outgoing position of a laser and is superior in yield. SOLUTION: Solder is adhered in advance to the supporting substrate (102) of a stem (601), a nitride semiconductor laser chip (401) is mounted thereto, and then the solder is melted to fix the nitride semiconductor laser chip (401) on the supporting substrate (102). The thickness of the solder adhered to the supporting substrate (102) is ≥0.2 μm and ≤20 μm, and the thickness thereof after the nitride semiconductor laser chip (401) is fixed is ≥0.1 μm and ≤5 μm. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005064136(A) 申请公布日期 2005.03.10
申请号 JP20030290532 申请日期 2003.08.08
申请人 SHARP CORP 发明人 OGAWA ATSUSHI
分类号 H01L21/52;H01S5/022;H01S5/323;H01S5/343;(IPC1-7):H01S5/022 主分类号 H01L21/52
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