发明名称 |
METHOD AND DEVICE FOR DEPOSITING MATERIALS WITH A LARGE ELECTRONIC ENERGY GAP AND HIGH BINDING ENERGY |
摘要 |
The invention relates to a method and to a device for depositing SiC and/or SiCxGe1-x (X=0-1) semiconductor layers or related materials with large (electronic) energy gap and especially with a high binding energy (for example AlN, GaN) by means of a CVD method. The inventive method and the corresponding device are characterized in that at least one substrate is heated to a temperature of approximately 1100 to approximately 1800 DEG C, that the at least one substrate is rotated in an all-around actively heated flow channel reactor and that the material is deposited by homo- or hetero-epitaxy. |
申请公布号 |
EP1218573(B1) |
申请公布日期 |
2005.03.09 |
申请号 |
EP20000965787 |
申请日期 |
2000.08.24 |
申请人 |
AIXTRON AG |
发明人 |
KAEPPELER, JOHANNES;WISCHMEYER, FRANK;STRAUCH, GERT;JUERGENSEN, HOLGER |
分类号 |
C23C16/42;C30B25/02;C30B25/10;C30B25/12;C30B25/14;C30B29/36;H01L21/205 |
主分类号 |
C23C16/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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