| 摘要 |
PURPOSE: A film bulk acoustic wave resonator is provided to optimize frequency transfer characteristics by maintaining an overlapped region between first and second electrode layers by forming the second electrode in a substantially circular shape. CONSTITUTION: A film bulk acoustic wave resonator includes a substantially planar semiconductor substrate, a film, first and second electrode layers, and a piezoelectric layer. The film(120) is formed on the semiconductor substrate. The first electrode layer(130) is vaporized on the film in a substantially circular shape. The piezoelectric layer(140) is vaporized on the first electrode in a substantially circular shape. The second electrode layer(150) is vaporized on the piezoelectric layer in a substantially circular shape. |
