发明名称 |
Method for ultra low-K dielectric deposition |
摘要 |
The present invention provides a method of forming a semiconductor structure having an ultra low-K dielectric material that adheres well to the substrate. The method includes depositing a low-K material on the top surface of a substrate at a low temperature of no more than 250° by a CVD or spin-on process. The dielectric material is then cured by placing the substrate with the dielectric film in an environment where the temperature is regulated at about 400° or less as the dielectric film is being subjected to a plasma treatment or an E-beam treatment or UV treatment. The environment may further include one or more gases or a mixture of gases selected from the group consisting of H2, N2, NH3, CO2, all hydride gases and a mixture of these gases.
|
申请公布号 |
US2005048795(A1) |
申请公布日期 |
2005.03.03 |
申请号 |
US20030649566 |
申请日期 |
2003.08.27 |
申请人 |
KO CHUNG-CHI;LU YUNG-CHENG;BAO TIEN-I;CHANG HUI-LIN;JANG SYUN-MING |
发明人 |
KO CHUNG-CHI;LU YUNG-CHENG;BAO TIEN-I;CHANG HUI-LIN;JANG SYUN-MING |
分类号 |
H01L21/312;H01L21/768;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/312 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|