METHOD FOR FORMING SILICON OXIDE LAYER IN SEMICONDUCTOR DEVICE TO PREVENT THRESHOLD VOLTAGE OF MOS TRANSISTOR FROM VARYING,申请号KR19970075118-传众专利搜索

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发明名称	METHOD FOR FORMING SILICON OXIDE LAYER IN SEMICONDUCTOR DEVICE TO PREVENT THRESHOLD VOLTAGE OF MOS TRANSISTOR FROM VARYING
摘要
申请公布号	KR100476396(B1)	申请公布日期	2005.03.03
申请号	KR19970075118	申请日期	1997.12.27
申请人	HYNIX SEMICONDUCTOR INC.	发明人	KO, SEOK YUN
分类号	H01L21/316;(IPC1-7):H01L21/316	主分类号	H01L21/316
代理机构		代理人
主权项
地址

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