| 摘要 |
PURPOSE: A method for forming a recess-type gate in a semiconductor memory is provided to simplify manufacturing process by reducing the number of steps by performing a gate forming operation right after a recess forming operation. CONSTITUTION: A photoresist pattern, having a pitch larger than that of a unit cell, is formed on a semiconductor substrate. A first aperture is formed by etching a portion of a hard mask layer using the photoresist pattern. The first aperture exposes a pad oxide layer. A first spacer having a predetermined thickness is formed on sidewalls of the first aperture. A second aperture is formed by etching a portion of a hard mask layer using the first spacer as an etching mask. The second aperture exposes a portion of the pad oxide layer. The exposed pad oxide layer is removed. The semiconductor substrate, exposed by the first and second apertures, is etched using the first spacer as the etching mask to form a recess. A gate insulating layer(124) is formed in the recess and a gate electrode(126) filling the recess is formed on the gate insulating layer. Then, a gate capping layer(128) is formed.
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