SEMICONDUCTOR MEMORY DEVICE AND FABRICATING METHOD THEREOF FOR REDUCING RESISTANCE OF EACH OF BIT LINES

摘要

PURPOSE: A semiconductor memory device and a fabricating method thereof are provided to reduce a resistance of each of bit lines by forming each of the bit lines with a diffusion bit line and a metal bit line. CONSTITUTION: A plurality of linear word lines(11) are formed on a semiconductor substrate(10). A plurality of linear bit lines meet at right angles to the word lines. A memory transistor is formed between the bit lines in the semiconductor substrate and employs the word lines as a gate electrode. An interlayer dielectric is formed on the memory transistor. Each of the bit lines is formed with a diffusion bit line(211) formed in the semiconductor substrate and a metal bit line(212) formed with being buried in the interlayer dielectric in a linear pattern and connected with the diffusion bit line between the word lines.