Cascaded diode structure for use in ESD clamp circuit, has deep N-well formed on P-type substrate, set of elemental diodes formed on deep N-well, and set of connecting parts to cascade elemental diodes

摘要

The structure has a deep N-well (52) formed on a P-type substrate. A set of elemental diodes are formed on the deep N-well. Each of the elemental diodes comprises a P-well (53) formed on the deep N-well. A heavily doped P-type region (54) is formed on the P-well, and a heavily doped N-type region is formed on the P-well. A set of connecting parts cascade the set of elemental diodes. Independent claims are also included for the following: (A) a method for forming a cascaded diode structure (B) an ESD clamp circuit comprising a cascaded diode structure.