| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element whose characteristics can be improved by forming a cobalt silicide film without losing the dopant. SOLUTION: Included are the stages of: forming a junction area 15 in a specified area on a semiconductor element after forming the gate in the specified area on the semiconductor substrate 11 and forming a spacer 14 on its side wall; forming a cobalt layer 18 and a buffer layer on the whole structure; forming a cobalt monosilicide film 20 on the gate and a junction area by carrying out a primary RTP process; forming an amorphous cobalt silicide film by making the surface of the cobalt monosilicide film amorphous by carrying output a carbon injecting process; and forming a cobalt disilicide film 21 by carrying output a secondary RTP process after removing a non-reacting cobalt film and the buffer layer. COPYRIGHT: (C)2005,JPO&NCIPI
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