METHOD OF CREATING HIGH-QUALITY RELAXED SiGe-ON-INSULATOR FOR STRAINED Si CMOS APPLICATIONS
摘要
A method of forming a thin, high-quality relaxed SiGe-on-insulator substrate material is provided which first includes forming a SiGe or pure Ge layer on a surface of a first single crystal Si layer which is present atop a barrier layer that is resistant to the diffusion of Ge. Optionally forming a Si cap layer over the SiGe or pure Ge layer, and thereafter heating the various layers at a temperature which permits interdiffusion of Ge throughout the first single crystal Si layer, the optional Si cap and the SiGe or pure Ge layer thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer. Additional SiGe regrowth and/or formation of a strained epi-Si layer may follow the above steps. SiGe-on-insulator substrate materials as well as structures including at least the SiGe-on-insulator substrate materials are also disclosed herein.
申请公布号
EP1479103(A4)
申请公布日期
2005.02.09
申请号
EP20030731957
申请日期
2003.01.16
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
BEDELL, STEPHEN, W.;CHU, JACK, O.;FOGEL, KEITH E.;KOESTER, STEPHEN, J.;SADANA, DEVENDRA, K.;OTT, JOHN, ALBRECHT