| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a high quality silicon carbide single crystal by growing the crystal without generating a new defect in a crystal growing process when the crystal is grown by using a large diameter seed crystal formed by a sublimation method and having defects. SOLUTION: In the method for manufacturing the silicon carbide single crystal comprising growing the single crystal by supplying a vapor gas from raw material silicon carbide at a temperature of≥2,000°C to a seed crystal of the silicon carbide single crystal, the method for manufacturing the silicon carbide single crystal is characterized by arranging the seed crystal in a crystal growth section of a low temperature in such a manner that the crystal surface of the seed crystal is inclined from (0001) plane or (000-1) plane at an angle of 4-45°, then growing the crystal at a growth speed of≤0.05 mm/h in the initial stage of the crystal growth, and thereafter, growing the crystal at a growth speed of≤1 mm/h. COPYRIGHT: (C)2005,JPO&NCIPI
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