IMPROVEMENTS IN OR RELATING TO FLOW STRAIGHTENING DEVICES,申请号GB19690033200-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	IMPROVEMENTS IN OR RELATING TO FLOW STRAIGHTENING DEVICES
摘要
申请公布号	GB1261069(A)	申请公布日期	1972.01.19
申请号	GB19690033200	申请日期	1969.07.01
申请人	BARKING BRASSWARE COMPANY LIMITED	发明人	GEORGE FRANCIS MOORE
分类号	E03C1/086	主分类号	E03C1/086
代理机构		代理人
主权项
地址

您可能感兴趣的专利

SOLAR CELL MODULE

LEAD-BISMUTH-TELLURIUM-SILICATE INORGANIC REACTION SYSTEM HAVING IMPROVED ADHESION PROPERTIES

SEMICONDUCTOR DIODE ASSEMBLY

SEMICONDUCTOR DEVICE STRUCTURE WITH METAL RING ON SILICON-ON-INSULATOR (SOI) SUBSTRATE

METAL GATE STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE, TRANSISTOR HAVING DOPED SEED LAYER AND METHOD OF MANUFACTURING THE SAME

FORMATION OF A HIGH ASPECT RATIO TRENCH IN A SEMICONDUCTOR SUBSTRATE AND A BIPOLAR SEMICONDUCTOR DEVICE HAVING A HIGH ASPECT RATIO TRENCH ISOLATION REGION

SEMICONDUCTOR STRUCTURE AND MANUFACUTURING METHOD OF THE SAME

TRANSISTORS AND FABRICATION METHODS THEREOF

FORMING A CONDUCTIVE CONNECTION BETWEEN A COMMON ELECTRODE OF AN OPTICAL FRONT PLANE AND AN ELECTRICAL CONTACT PART OF AN OPPOSITE BACK PLANE

EDGE TERMINATION CONFIGURATIONS FOR HIGH VOLTAGE SEMICONDUCTOR POWER DEVICES

METHOD FOR MANUFACTURING A MULTILAYER STRUCTURE ON A SUBSTRATE

TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN VOLTAGE CHARACTERISTICS

LIGHT-EMITTING ELEMENT DISPLAY DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

DUMMY GATE STRUCTURE FOR ELECTRICAL ISOLATION OF A FIN DRAM

METHOD OF MAKING PROTECTIVE LAYER OVER POLYSILICON STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR APPARATUS HAVING PAD AND BUMP