METHOD OF MANUFACTURING DIFFUSED WAFER

摘要

PROBLEM TO BE SOLVED: To significantly lower the fraction defective of the withstand voltage of a semiconductor device using a power MOS transistor by manufacturing a diffused wafer containing Fe at a concentration of≤100×1012atoms/cm3by using a heat-treating member containing Fe at a concentration of≤0.5 ppm. SOLUTION: In a method of manufacturing a diffused wafer obtained by diffusing an impurity in a wafer and containing Fe at a concentration of≤100×1012atoms/cm3, the wafer is heat-treated at a high temperature by means of the heat-treating member containing Fe at a concentration of≤0.5 ppm. COPYRIGHT: (C)2005,JPO&NCIPI