| 摘要 |
A silicon single-crystal wafer having a diameter of 6 inches or larger and improved in the dielectric strength of oxide film especially in a peripheral part thereof is provided to thereby heighten the yield of device chips produced per wafer. This wafer has no defects with regard to the dielectric strength of oxide film in its peripheral region which extends from the edge and accounts for up to 50 % of the total area, in particular which extends from the edge to a circle 30 mm apart from the edge. A process for easily producing, by the Czochralski method, a silicon single-crystal wafer improved in the dielectric strength of oxide film especially in a peripheral part thereof without considerably lowering the production efficiency. In this process, the silicon single crystal which is being grown by the Czochralski method is withdrawn at a rate which is 80 to 60 % of the critical rate inherent in the pulling device. <IMAGE>
|
