发明名称 SINGLE CHIP DATA PROCESSING DEVICE WITH EMBEDDED NONVOLATILE MEMORY AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a single chip data processing device with embedded nonvolatile memory, and to provide a method of manufacturing the same. SOLUTION: The single chip data processing device is characterised by being provided with a first conductive-type substrate having a first doping concentration, a first well formed on the substrate, a first conductive-type second well which is deeper than the first well and has a higher concentration than the first doping concentration and a nonvolatile memory cell formed on the second well. Four different kinds of wells can be disposed on the substrate. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005012227(A) 申请公布日期 2005.01.13
申请号 JP20040180789 申请日期 2004.06.18
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 PARK WEON-HO;KIM SANGSOO;YOO HYUN-KHE;PARK SUNG CHUL;KIM BYOUNG-HO;KIM JU-RI;YOON SEUNG-BEOM;HAN JEONG-UK
分类号 H01L21/76;H01L21/762;H01L21/8234;H01L21/8238;H01L21/8247;H01L27/088;H01L27/092;H01L27/10;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824;H01L21/823 主分类号 H01L21/76
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