发明名称 |
SINGLE CHIP DATA PROCESSING DEVICE WITH EMBEDDED NONVOLATILE MEMORY AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a single chip data processing device with embedded nonvolatile memory, and to provide a method of manufacturing the same. SOLUTION: The single chip data processing device is characterised by being provided with a first conductive-type substrate having a first doping concentration, a first well formed on the substrate, a first conductive-type second well which is deeper than the first well and has a higher concentration than the first doping concentration and a nonvolatile memory cell formed on the second well. Four different kinds of wells can be disposed on the substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005012227(A) |
申请公布日期 |
2005.01.13 |
申请号 |
JP20040180789 |
申请日期 |
2004.06.18 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
PARK WEON-HO;KIM SANGSOO;YOO HYUN-KHE;PARK SUNG CHUL;KIM BYOUNG-HO;KIM JU-RI;YOON SEUNG-BEOM;HAN JEONG-UK |
分类号 |
H01L21/76;H01L21/762;H01L21/8234;H01L21/8238;H01L21/8247;H01L27/088;H01L27/092;H01L27/10;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824;H01L21/823 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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地址 |
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