| 摘要 |
The inclination of a word line near asymmetrical contacts is improved by providing an extending portion between the contact and the word line in a DRAM cell array pattern having the asymmetrical contact at an end portion of the word line extending in one direction. The extending portion is provided symmetrically to the word line or is provided on the opposed side of the extending direction of the asymmetrical contact. Alternatively, the extending portion is provided for a bit line as well as the word line. |
