发明名称 |
Dual layer barrier film techniques to prevent resist poisoning |
摘要 |
Provided is a process for forming a barrier film to prevent resist poisoning in a semiconductor device by depositing a second nitrogen-free barrier layer on top of a first barrier layer containing nitrogen. A low-k dielectric layer is formed over the second barrier layer. This technique maintains the low electrical leakage characteristics of the first barrier layer and reduces nitrogen poisoning of a photoresist layer subsequently applied.
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申请公布号 |
US2004253784(A1) |
申请公布日期 |
2004.12.16 |
申请号 |
US20040893659 |
申请日期 |
2004.07.16 |
申请人 |
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发明人 |
LU HONG-QIANG;HSIA WEI-JEN;CATABAY WILBUR G. |
分类号 |
H01L21/8238;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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