发明名称 Power semiconductor module
摘要 The invention relates to a power semiconductor module, in particular a power converter module, with a base plate or for direct installation on a heat sink or other cooling body or means for cooling. The power semiconductor module includes, at least one power semiconductor component, and at least one insulating substrate on whose first surface a metallic layer is provided. A carbon-based layer (including Carbon nano-tubes) is used for at least one of a thermal and a partly electrical contacting, on at least one of the one side for contacting the power semiconductor component with the metallic layer and, (in an alternate embodiment) on the other side to connect the substrate with the heat sink or cooling body.
申请公布号 US6831359(B2) 申请公布日期 2004.12.14
申请号 US20030684310 申请日期 2003.10.11
申请人 SEMIKRON ELEKTRONIK GMBH 发明人 HEILBRONNER HEINRICH
分类号 H01L23/373;H01L25/07;H01L25/18;(IPC1-7):H01L23/34 主分类号 H01L23/373
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