发明名称 |
Field effect transistor using vanadium dioxide layer as channel material and method of manufacturing the field effect transistor |
摘要 |
Provided is a field effect transistor. The field effect transistor includes an insulating vanadium dioxide (VO2) thin film used as a channel material, a source electrode and a drain electrode disposed on the insulating VO2 thin film to be spaced apart from each other by a channel length, a dielectric layer disposed on the source electrode, the drain electrode, and the insulating VO2 thin film, and a gate electrode for applying a predetermined voltage to the dielectric layer.
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申请公布号 |
US2004245582(A1) |
申请公布日期 |
2004.12.09 |
申请号 |
US20030749596 |
申请日期 |
2003.12.30 |
申请人 |
KIM HYUN TAK;KANG KWANG YONG;YOUN DOO HYEB;CHAE BYUNG GYU |
发明人 |
KIM HYUN TAK;KANG KWANG YONG;YOUN DOO HYEB;CHAE BYUNG GYU |
分类号 |
H01L49/00;(IPC1-7):H01L29/76 |
主分类号 |
H01L49/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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