发明名称 |
MANUFACTURE METHOD FOR DISPLAY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a technique for preventing a transistor from being irradiated with radioactive rays when a metal film is deposited by means of an electron beam deposition method. SOLUTION: The display device is provided with transistors, light emitting elements electrically connected to the transistors and thin films having radiation absorptivity disposed on one part of constitutional parts of the transistors. With such a constitution, the transistor is prevented from being irradiated with radioactive rays when the metal film is deposited by means of an electron beam deposition method from above the thin film having the radiation absorptivity. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2004341443(A) |
申请公布日期 |
2004.12.02 |
申请号 |
JP20030140857 |
申请日期 |
2003.05.19 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
HAMADA TAKASHI;HAYAKAWA MASAHIKO;YAMAZAKI SHUNPEI |
分类号 |
H05B33/10;C23C14/24;G09F9/00;G09F9/30;H01L21/768;H01L23/522;H01L27/32;H01L29/786;H01L51/50;H05B33/14;H05B33/26;(IPC1-7):G09F9/30 |
主分类号 |
H05B33/10 |
代理机构 |
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