发明名称 MANUFACTURE METHOD FOR DISPLAY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a technique for preventing a transistor from being irradiated with radioactive rays when a metal film is deposited by means of an electron beam deposition method. SOLUTION: The display device is provided with transistors, light emitting elements electrically connected to the transistors and thin films having radiation absorptivity disposed on one part of constitutional parts of the transistors. With such a constitution, the transistor is prevented from being irradiated with radioactive rays when the metal film is deposited by means of an electron beam deposition method from above the thin film having the radiation absorptivity. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004341443(A) 申请公布日期 2004.12.02
申请号 JP20030140857 申请日期 2003.05.19
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 HAMADA TAKASHI;HAYAKAWA MASAHIKO;YAMAZAKI SHUNPEI
分类号 H05B33/10;C23C14/24;G09F9/00;G09F9/30;H01L21/768;H01L23/522;H01L27/32;H01L29/786;H01L51/50;H05B33/14;H05B33/26;(IPC1-7):G09F9/30 主分类号 H05B33/10
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