PROCESS FOR DEPOSITING Zr/Hf OXYNITRIDE FILMS AND Zr/Hf-Si OXYNITRIDE FILMS ON SUBSTRATE BY FORMING REACTION MIXTURE IN CHEMICAL DEPOSITION CHAMBER AND ADDING SILICON PRECURSOR TO REACTION MIXTURE

摘要

PURPOSE: To provide a process for forming Zr and Hf oxynitride films(ZrOxNy and HfOxNy) and Zr and Hf silicon oxynitride films£Zr(Si)zOxNy and Hf(Si)zOxNy|suitably used in electronic applications such as a gate insulation film, wherein variables x, y and z are positive numbers greater than zero. CONSTITUTION: The process for forming a metal oxynitride film selected from the group consisting of Zr oxynitride film and Hf oxynitride film on a substrate comprises a step(a) of conveying a precursor selected from the group consisting of Zr and Hf amide precursors in the gas state to a chemical deposition chamber; a step(b) of conveying oxygen and ammonia to the chemical deposition chamber separately from the precursor; and a step(c) of contacting a reaction mixture formed by conveyance of the precursor, oxygen and ammonia with a substrate heated to a temperature of 300 to 700 deg.C in the chemical deposition chamber so that a metal oxynitride film is deposited on the substrate.