| 发明名称 |
Methods for erasing flash memory |
| 摘要 |
Methods for erasing flash memory using a decrease in magnitude of a source voltage of a first polarity to increase the magnitude of a control gate voltage of a second polarity during an erase period.
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| 申请公布号 |
US2004233751(A1) |
申请公布日期 |
2004.11.25 |
| 申请号 |
US20040876184 |
申请日期 |
2004.06.24 |
| 申请人 |
|
发明人 |
MIHNEA ANDREI;CHEN CHUN |
| 分类号 |
G11C16/02;G11C11/34;G11C16/06;G11C16/14;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C11/34 |
主分类号 |
G11C16/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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