发明名称 Sputter source, sputtering device, and sputtering method
摘要 According to the invention, when targets are sputtered, each of them moves with respect to a substrate; and therefore, the entire area of the substrate is opposed to the targets during sputtering, so that a film of homogeneous quality can be formed on the surface of the substrate. During the sputtering, not only the targets but also magnetic field forming devices are moved relative to the targets, and therefore, a large area of the targets can be sputtered. In addition, when the magnetic field forming devices are also moved with respect to the substrate, the region of the target which is highly sputtered, moves with respect to the substrate, so that the thickness distribution of the film formed on the substrate can be even more uniform.
申请公布号 US2004231973(A1) 申请公布日期 2004.11.25
申请号 US20040848008 申请日期 2004.05.19
申请人 ULVAC, INC. 发明人 SATO SHIGEMITSU;MATSUDAI MASASUKE;OOZORA HIROKI;KIYOTA JUNYA;NAKAMURA HAJIME;ISHIBASHI SATORU;OTA ATSUSHI
分类号 C23C14/34;C23C14/08;C23C14/35;H01J37/34;(IPC1-7):C23C14/32 主分类号 C23C14/34
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