| 摘要 |
PURPOSE: To acceleratedly increase the speed, function, etc., of a semiconductor device by incorporating specified amts. of Sb, Bi, Ca and Ge into high-purity gold. CONSTITUTION: This IC chip bonding gold wire contains 0.0005-0.001wt.% Sb, 0.0001-0.005% Bi, at least one kind between 0.00005-0.1% Ca and 0.0001-0.01% Ge and further 0.0001-0.02% at least one kind among Eu, Y, La, Pb, Er, Gd, Ce, Pr, Nd, Sm and Yb in >=99.999% high-purity gold. Consequently, thermocompression bonding using an ultrasonic wave jointly with the ultrasonic output increased by the synergistic effect of the metallic elements is conducted, and a gold alloy wire excellent in the fatigue characteristic and in breaking performance when exposed to the environment of a heat cycle is obtained. |
