| 摘要 |
PROBLEM TO BE SOLVED: To improve detection sensitivity by reducing a recombination current in an interface when an SOI substrate is used. SOLUTION: A current path 16 into which impurities are introduced at a predetermined concentration is provided on a semiconductor layer 15 of the SOI substrate 12, and high concentration n-type regions 17 are formed at four corners thereof. An electrode film 19 composed of polycrystalline silicon is formed on the upper part of the current path 16 via an insulating film 18. By applying voltages to the film 19 and a supporting substrate 13, depletion layers 20a, 20b are formed on the surface layer and the bottom of the current path 16. The recombination current at an interface can be suppressed at the time of measuring a hall voltage. COPYRIGHT: (C)2005,JPO&NCIPI
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