| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a p-type activation method capable of converting a GaN based compound semiconductor into a low resistance p-type semiconductor by low temperature or short time annealing even if hydrogen is contained substantially in an annealing atmosphere. <P>SOLUTION: A GaN based compound semiconductor 7 implanted with p-type impurities is formed and after a hydrogen absorbable/permeable film 10 having an action for absorbing hydrogen in the GaN based compound semiconductor 7 and discharging it to the outside is formed on the surface thereof, the GaN based compound semiconductor 7 is annealed. Consequently, hydrogens bonding to p-type impurities implanted into the GaN based compound semiconductor 7 are released thus effecting p-type activation of the GaN based compound semiconductor 7. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
