发明名称 |
MIM capacitors and methods for fabricating same |
摘要 |
Semiconductor devices and methods for making the same are described in which a single high k or ferroelectric dielectric layer is used to form decoupling capacitors and analog capacitor segments. Analog capacitors are formed by coupling analog capacitor segments in series with one another, wherein the capacitor segments may be connected in reverse polarity relationship to provide symmetrical performance characteristics for the analog capacitors.
|
申请公布号 |
US6803641(B2) |
申请公布日期 |
2004.10.12 |
申请号 |
US20030638596 |
申请日期 |
2003.08.11 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
PAPA RAO SATYAVOLU S.;HAIDER ASAD M.;TAYLOR KELLY;BURKE ED |
分类号 |
H01L21/768;H01L21/02;H01L21/822;H01L27/04;H01L27/08;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|