| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve photo-process margin of a gate line by reducing total number of gate lines using a single gate line as a sharing line instead of a bit line. CONSTITUTION: A plurality of ISO cells(21) are formed on a semiconductor substrate. A gate line(23) is arranged on the ISO cells to cross vertically. Bit lines(27) are arranged to vertically cross the gate line. One end of the ISO cell is connected to the bit line and the other end of the ISO cell is connected to a storage node(31).
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