| 摘要 |
A band gap voltage reference for an NMOS memory device includes a plurality of horizontal gate bipolar junction transistors that show improved gain at low collector currents. The horizontal gate bipolar transistors include an emitter formed by the NMOS memory device n+ source region, a base formed by the NMOS memory device p+ channel region, and a collector formed by the NMOS memory device n+ drain region, in which the base/channel region is less than 0.4 mum in width and advantageously may be fabricated by standard flash memory manufacturing processes.
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