发明名称 |
Electrostatic discharge (ESD) protection device with simultaneous and distributed self-biasing for multi-finger turn-on |
摘要 |
An ESD protection circuit for a semiconductor integrated circuit (IC) having protected circuitry, includes an SCR having at least one finger. Each finger Includes a PNP transistor and an NPN transistor, where an emitter of the PNP and NPN transistors is respectively coupled between an I/O pad of the IC and ground, a base of the PNP transistor being coupled to a collector of the NPN transistor, and a base of the NPN transistor being coupled to a collector of the PNP transistor. The NPN transistor of each finger further includes a first gate for triggering said finger. A PMOS transistor includes a source and a drain respectively coupled to the I/O pad of the IC and the first gate of the NPN transistor. Further, a gate of the PMOS transistor is coupled to a supply voltage of the IC.
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申请公布号 |
US2004188776(A1) |
申请公布日期 |
2004.09.30 |
申请号 |
US20040822912 |
申请日期 |
2004.04.12 |
申请人 |
RUSS CORNELIUS CHRISTIAN;ARMER JOHN;MERGENS MARKUS PAUL JOSEF;JOZWIAK PHILLIP CZESLAW |
发明人 |
RUSS CORNELIUS CHRISTIAN;ARMER JOHN;MERGENS MARKUS PAUL JOSEF;JOZWIAK PHILLIP CZESLAW |
分类号 |
H01L27/04;H01L21/822;H01L21/8238;H01L27/02;H01L27/06;H01L27/092;(IPC1-7):H01L23/62 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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