| 摘要 |
PURPOSE: An exposure mask of a semiconductor device is provided to exactly identify defocus generation by forming an absolute pattern for measuring DOF(Depth of Focus) at a single overlap mark. CONSTITUTION: An exposure mask includes an overlap mark including an inner box(31) and outer bars(33) of rectangle structure spaced apart from the inner box, and absolute patterns(35) for measuring DOF. Each absolute pattern is formed at a vertex portion of the rectangle structure. The overlap mark has a bar in box shape.
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