SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, ELECTRO-OPTICAL DEVICE, PROJECTION DISPLAY APPARATUS, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To prevent the oxide film of a substrate from being etched through cracks in a semiconductor layer which is generated in a sacrificial oxidation process when the sacrificial oxide film is etched on the semiconductor layer. SOLUTION: The sacrifice oxidation of a semiconductor layer 206 laminated on a substrate 10A through a first oxide film 206b is performed in part. When a second oxide film 206c obtained by the sacrifice oxidation is subjected to overetching, the amount of overetching is set to become below the thickness of the semiconductor layer 206 after the sacrifice oxidation. COPYRIGHT: (C)2004,JPO&NCIPI