METHOD OF FORMING A FLUX CONCENTRATING LAYER OF A MAGNETIC DEVICE

摘要

A method of forming a magnetic device (10), especially the digit line (28) of a magnetic random access memory (MRAM) device is disclosed. The digit line (28) includes a stack of materials that includes a barrier layer (18), a seed layer (20) and a soft magnetic layer (22) that is electrochemically deposited. Preferably, the barrier layer (18) and the seed layer (20) are formed by physical vapor deposition (PVD) and the soft magnetic layer (22) is formed by electroless plating. In one embodiment, the barrier layer (18) includes tantalum, the seed layer (20) includes ruthenium and the soft magnetic layer (22) includes nickel and iron.