发明名称 Apparatus for adjusting input capacitance of semiconductor device and fabricating method
摘要 An apparatus for finely adjusting the input capacitance of a semiconductor device and a method of fabricating the apparatus are disclosed. The invention adjusts finely the input capacitance without increasing a layout area of the device by using a capacitor constructed with a poly layer/device isolation layer/P-type substrate. The poly layer is formed on an unnecessary space provided by the device isolation layer under an input pad.
申请公布号 US2004161916(A1) 申请公布日期 2004.08.19
申请号 US20040782880 申请日期 2004.02.23
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM TAEK SEUNG
分类号 H01L27/04;G11C5/00;H01L23/60;H01L23/64;H01L27/02;H04L25/02;(IPC1-7):H01L29/00;H01L21/476 主分类号 H01L27/04
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