发明名称 Dram refresh scheme with flexible frequency for active and standby mode
摘要 The present invention provides a method and an apparatus for DRAM refresh with different frequencies of refresh for active and standby mode. In addition, this invention utilizes different refresh frequencies during active and standby modes to optimize power dissipation and DRAM data integrity. The refresh frequency during active mode is higher than said refresh frequency during standby mode. The refresh frequency during active mode is higher than the prior art refresh frequency during active mode. The refresh frequency during standby mode is lower than the prior art refresh frequency during standby mode. The higher active mode refresh frequency allows the faster restoration of cell data, which is degraded by capacitive discharge coupling through the selection of adjacent word lines. The low standby mode refresh frequency provides a lower standby power dissipation which compensates for the higher active mode power dissipation caused by the higher active mode refresh frequency.
申请公布号 US2004141396(A1) 申请公布日期 2004.07.22
申请号 US20030346588 申请日期 2003.01.17
申请人 ETRON TECHNOLOGY, INC. 发明人 TING TAH-KANG JOSEPH;SHIAH CHUN;LIU SHI HUEI
分类号 G11C11/406;(IPC1-7):G11C7/00 主分类号 G11C11/406
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