发明名称 Combined semiconductor apparatus with semiconductor thin film
摘要 A combined semiconductor apparatus includes a semiconductor substrate having an integrated circuit, a planarized region formed in a surface of the semiconductor substrate, and a semiconductor thin film including at least one semiconductor device and bonded on the planarized region. A surface of the semiconductor thin film, in which the semiconductor device is formed, is disposed on a side of the planarized region. The apparatus may further include a planarized film disposed between the planarized region and the semiconductor thin film.
申请公布号 US2004135157(A1) 申请公布日期 2004.07.15
申请号 US20030743104 申请日期 2003.12.23
申请人 OGIHARA MITSUHIKO;FUJIWARA HIROYUKI;SAKUTA MASAAKI;ABIKO ICHIMATSU 发明人 OGIHARA MITSUHIKO;FUJIWARA HIROYUKI;SAKUTA MASAAKI;ABIKO ICHIMATSU
分类号 B41J2/44;B41J2/45;B41J2/455;H01L27/15;H01L33/08;H01L33/30;H01L33/44;H01L33/58;H01L33/62;(IPC1-7):H01L27/15;H01L33/00 主分类号 B41J2/44
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