发明名称 |
Combined semiconductor apparatus with semiconductor thin film |
摘要 |
A combined semiconductor apparatus includes a semiconductor substrate having an integrated circuit, a planarized region formed in a surface of the semiconductor substrate, and a semiconductor thin film including at least one semiconductor device and bonded on the planarized region. A surface of the semiconductor thin film, in which the semiconductor device is formed, is disposed on a side of the planarized region. The apparatus may further include a planarized film disposed between the planarized region and the semiconductor thin film. |
申请公布号 |
US2004135157(A1) |
申请公布日期 |
2004.07.15 |
申请号 |
US20030743104 |
申请日期 |
2003.12.23 |
申请人 |
OGIHARA MITSUHIKO;FUJIWARA HIROYUKI;SAKUTA MASAAKI;ABIKO ICHIMATSU |
发明人 |
OGIHARA MITSUHIKO;FUJIWARA HIROYUKI;SAKUTA MASAAKI;ABIKO ICHIMATSU |
分类号 |
B41J2/44;B41J2/45;B41J2/455;H01L27/15;H01L33/08;H01L33/30;H01L33/44;H01L33/58;H01L33/62;(IPC1-7):H01L27/15;H01L33/00 |
主分类号 |
B41J2/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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