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发明名称
Anordnung zur Realisierung einer stark dotierten vergrabenen epitaktischen Schicht
摘要
申请公布号
DE19953333(B4)
申请公布日期
2004.07.15
申请号
DE19991053333
申请日期
1999.11.05
申请人
INFINEON TECHNOLOGIES AG
发明人
NELLE, PETER;SCHAEFER, HERBERT;VIETZKE, DIRK;STECHER, MATTHIAS;BAUMGARTL, JOHANNES;PERI, HERMANN
分类号
H01L21/74;H01L21/761;(IPC1-7):H01L29/06
主分类号
H01L21/74
代理机构
代理人
主权项
地址
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