METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to control bowing and avoid a bridge of a subsequent storage node by eliminating a nitride layer deposited to prevent bowing after a process for patterning an oxide layer while using a H3PO4 solution. CONSTITUTION: An interlayer dielectric(12) is formed on a semiconductor substrate(10). A nitride layer(16) for an etch barrier and an oxide layer(18) are formed on the interlayer dielectric. The oxide layer is selectively etched to form a contact hole for defining a storage node region. A spacer nitride layer is formed on the resultant structure. The spacer nitride layer and the exposed nitride layer are removed by using a H3PO4 solution. A storage node separated into each cell is formed in the contact hole.