| 摘要 |
PURPOSE: A method for forming a fine pattern of a semiconductor device is provided to reduce the surface roughness of the fine pattern by depositing an organic layer on a photoresist pattern. CONSTITUTION: An ARC(Anti-Reflective Coating) layer(13) is formed on a semiconductor substrate(11) with an etch target layer. A photoresist pattern(15) is formed on the ARC layer. An organic layer is formed on the photoresist pattern. A uniform photoresist pattern is formed by plasma etching the surface of the photoresist pattern including the organic layer.
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