| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a transfer mask whereby a silicon oxide layer exposed between supports can efficiently be removed by wet etching. <P>SOLUTION: The manufacturing method for manufacturing the transfer mask comprising a membrane and a support substrate 11 with the supports 11a for supporting the membrane includes the steps of preparing an SOI substrate 10 comprising the silicon support substrate 11, the silicon oxide layer 12, and a silicon active layer 13; doping heteroatoms to the silicon active layer 13; forming an etching mask resulting from patterning parts corresponding to support forming positions on the silicon support substrate 11; removing the silicon support substrate in following to the etching mask by dry etching to form the supports; preventing adhesion of air bubbles between the supports; and removing the silicon oxide layer 12 exposed between the supports by wet etching. <P>COPYRIGHT: (C)2004,JPO</p> |
