| 发明名称 |
Semiconducting devices and method of making thereof |
| 摘要 |
The invention relates to a process for providing a semiconducting device including the steps of depositing a semiconducting layer onto a substrate by means of heating a gas to a predetermined, disassociation temperature so that the gas dissociates into fractions, whereby these fractions subsequently condense on the substrate to build up a semiconducting layer.
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| 申请公布号 |
US6750474(B1) |
申请公布日期 |
2004.06.15 |
| 申请号 |
US20010852999 |
申请日期 |
2001.05.10 |
| 申请人 |
DEBYE INSTITUUT. UNIVERSITEIT ULTRECHT |
发明人 |
MEILING HANS;SCHROPP RUDOLF EMMANUEL ISIDOR |
| 分类号 |
C23C16/24;C23C16/44;C23C16/50;C23C16/511;H01L21/205;H01L21/336;H01L29/786;H01L31/04;(IPC1-7):H01L29/04;H01L31/036;H01L31/037;H01L31/20 |
主分类号 |
C23C16/24 |
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