发明名称 RESET CIRCUIT AND NONVOLATILE FERROELECTRIC MEMORY APPARATUS USING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To improve operation characteristics of a memory. <P>SOLUTION: A reset signal generating circuit is provided with a power source sensor which maintains the magnitude of an applied voltage for a specified period, a critical voltage controller which outputs the voltage by adjusting the level of a power source voltage for generation of a reset signal according to a change in the power source voltage and a bias voltage, a feedback controller which pulls down the output voltage of the power source sensor when the power source voltage attains a specified level in accordance with the output voltage of the critical voltage controller, a pull-up controller which outputs a reset signal for the change in the output voltage of the power source sensor by pulling up the output voltage of the power source sensor, and a self-bias section which outputs the bias voltage and adjusts the current capacity to be supplied to the feedback controller from the critical voltage controller according to the change in the power source voltage. The reset signal is stably generated only when the power source voltage reaches the specified level regardless of the power-up slope of the power source voltage. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004164814(A) 申请公布日期 2004.06.10
申请号 JP20030186341 申请日期 2003.06.30
申请人 HYNIX SEMICONDUCTOR INC 发明人 KANG HEE BOK
分类号 G06F1/26;G06F1/24;G11C7/00;G11C11/22;H03K3/356;H03K17/22;(IPC1-7):G11C11/22 主分类号 G06F1/26
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