发明名称 Integrated circuit having reduced soft errors and reduced penetration of alkali impurities into the substrate
摘要 A semiconductor device wherein a coating film which is made of a polyimide resin or a polyimide isoindoloquinazolinedione resin and which is at least 10 mum thick is disposed on at least an active region of a semiconductor substrate, and the resultant semiconductor substrate is encapsulated in a ceramic package. The semiconductor device has troubles relieved conspicuously, the troubles being ascribable to alpha-rays which come flying from impurities contained in the material of the package.
申请公布号 US6747339(B1) 申请公布日期 2004.06.08
申请号 US19940362293 申请日期 1994.12.22
申请人 HITACHI, LTD. 发明人 MUKAI KIICHIRO;SAIKI ATSUSHI;HARADA SEIKI
分类号 H01L21/312;H01L23/057;H01L23/10;H01L23/29;H01L23/31;H01L23/556;(IPC1-7):H01L23/58;H01L23/06;H01L23/04;H01L29/40 主分类号 H01L21/312
代理机构 代理人
主权项
地址